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KM736V795

Samsung Semiconductor
Part Number KM736V795
Manufacturer Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
Published Jan 12, 2011
Detailed Description KM736V795 Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. ...
Datasheet PDF File KM736V795 PDF File

KM736V795
KM736V795

Overview
KM736V795 Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev.
No.
0.
0 0.
1 History Initial draft Change DC characteristics VDD condition from VDD=3.
3V+10%/-5% Change Input/output leackage currant from ±1µA to ±2µA Modify Read timing & Power down cycle timing.
Change ISB2 value from 30mA to 20mA.
Remove DC characteristics ISB1 - L ver.
& ISB2 - L ver .
Remove Low power version.
Change Undershoot spec from -3.
0V(pulse width≤20ns) to -2.
0V(pulse width≤tCYC/2) Add Overshoot spec 4.
6V((pulse width≤tCYC/2) Change VIN max from 5.
5V to VDD+0.
5V Draft Date February.
02.
1998 February.
12.
1998 Remark Preliminary Preliminary 0.
2 April.
14.
1...


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