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FU9N20D

International Rectifier
Part Number FU9N20D
Manufacturer International Rectifier
Description IRFU9N20D
Published Jan 9, 2011
Detailed Description PD - 93919A SMPS MOSFET Applications High frequency DC-DC converters IRFR9N20D IRFU9N20D HEXFET® Power MOSFET l VDSS...
Datasheet PDF File FU9N20D PDF File

FU9N20D
FU9N20D


Overview
PD - 93919A SMPS MOSFET Applications High frequency DC-DC converters IRFR9N20D IRFU9N20D HEXFET® Power MOSFET l VDSS 200V RDS(on) max 0.
38Ω ID 9.
4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR9N20D I-Pak IRFU9N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
9.
4 6.
7 38 86 0.
57 ± 30 5.
0 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes  through † are on page 10 www.
irf.
com 1 6/29/00 www.
DataSheet.
in IRFR9N20D/IRFU9N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units Conditions 200 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
23 ––– V/°C Reference to 25°C, ID = 1mA † ––– ––– 0.
38 Ω VGS = 10V, ID = 5.
6A „ 3.
0 ––– 5.
5 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 200V, VGS = 0V µA ––– ––– 250 VDS = 160V, VGS = 0V, T J = 150°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Outpu...


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