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SBR13003B1

WINSEMI SEMICONDUCTOR
Part Number SBR13003B1
Manufacturer WINSEMI SEMICONDUCTOR
Description NPN Power Transistor
Published Jan 6, 2011
Detailed Description SBR13003B1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capabil...
Datasheet PDF File SBR13003B1 PDF File

SBR13003B1
SBR13003B1

Overview
SBR13003B1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc* = 25℃ Total Dissipation at Ta* = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 Value...


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