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2SD2562

Part Number	2SD2562
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Dec 9, 2010
Datasheet	2SD2562 PDF File

Features

isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= ...

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