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WFF12N60

Part Number	WFF12N60
Manufacturer	WINSEMI SEMICONDUCTOR
Description	Silicon N-Channel MOSFET
Published	Nov 25, 2010
Detailed Description	www.DataSheet.in WFF12N60 Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Cha...
Datasheet	WFF12N60 PDF File

Overview

www.
DataSheet.
in WFF12N60 Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.
65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 39nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ball...

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