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WFF13N50

WINSEMI SEMICONDUCTOR
Part Number WFF13N50
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in N50 WFF13 F13N50 Silicon N-Channel MOSFET Features � � � � � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V Ultra...
Datasheet PDF File WFF13N50 PDF File

WFF13N50
WFF13N50


Overview
www.
DataSheet.
in N50 WFF13 F13N50 Silicon N-Channel MOSFET Features � � � � � 13A,500V, RDS(on)(Max0.
46Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.
This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol V...



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