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WFF5N60

WINSEMI SEMICONDUCTOR
Part Number WFF5N60
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in WFF5N60 Silicon N-Channel MOSFET Features ■ 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V ■ Ultra-low Gate Charg...
Datasheet PDF File WFF5N60 PDF File

WFF5N60
WFF5N60


Overview
www.
DataSheet.
in WFF5N60 Silicon N-Channel MOSFET Features ■ 4.
5A,600V,RDS(on)(Max 2.
2Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ, Tstg ...



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