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WFF8N60

Part Number	WFF8N60
Manufacturer	WINSEMI SEMICONDUCTOR
Description	Silicon N-Channel MOSFET
Published	Nov 25, 2010
Detailed Description	www.DataSheet.in WFF8N60 Silicon N-Channel MOSFET Features � � � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gat...
Datasheet	WFF8N60 PDF File

Overview

www.
DataSheet.
in WFF8N60 Silicon N-Channel MOSFET Features � � � � � � 7.
5A,600V,RDS(on)(Max1.
2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (VISO=4000V AC) Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
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