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WFF9N50

WINSEMI SEMICONDUCTOR
Part Number WFF9N50
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in WFF9N50 Silicon N-Channel MOSFET Features � � � � � 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate ...
Datasheet PDF File WFF9N50 PDF File

WFF9N50
WFF9N50

Overview
www.
DataSheet.
in WFF9N50 Silicon N-Channel MOSFET Features � � � � � 9A,500V, RDS(on)(Max0.
85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol VDSS ID...


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