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WFP18N20

WINSEMI SEMICONDUCTOR
Part Number WFP18N20
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in WFP18N20 Silicon N-Channel MOSFET Features � � � � � 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gat...
Datasheet PDF File WFP18N20 PDF File

WFP18N20
WFP18N20

Overview
www.
DataSheet.
in WFP18N20 Silicon N-Channel MOSFET Features � � � � � 18A,200V,RDS(on)(Max 0.
18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology.
This latest technology has especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters,and DC motor control.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg ...


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