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WFP10N60

WINSEMI SEMICONDUCTOR
Part Number WFP10N60
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in P10N60 WF WFP Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-...
Datasheet PDF File WFP10N60 PDF File

WFP10N60
WFP10N60


Overview
www.
DataSheet.
in P10N60 WF WFP Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.
75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a highrugged avalanche characteristics.
This devices is specially wellsuited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
Absolute Maximum Ratings Symbol VDSS ID...



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