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WFY3P02

WINSEMI SEMICONDUCTOR
Part Number WFY3P02
Manufacturer WINSEMI SEMICONDUCTOR
Description 20V P-Channel MOSFET
Published Nov 25, 2010
Detailed Description WFY3P02 −20V, P−Channel MOSFET , Features ■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Ga...
Datasheet PDF File WFY3P02 PDF File

WFY3P02
WFY3P02

Overview
WFY3P02 −20V, P−Channel MOSFET , Features ■ -3.
2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.
5V ■ −1.
8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S D SOT-23 Marking: H03F Absolute Maximum Ratings Symbol VDSS ID Drain Source Voltage Continuous Drain Current(Note 1) Steady St...


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