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FLC167WF

Fujitsu Component
Part Number FLC167WF
Manufacturer Fujitsu Component
Description C-Band Power GaAs FET
Published Nov 25, 2010
Detailed Description FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) ...
Datasheet PDF File FLC167WF PDF File

FLC167WF
FLC167WF

Overview
FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.
8dBm(Typ.
) High Gain: G1dB = 7.
5dB(Typ.
) High PAE: ηadd = 35%(Typ.
) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating ...


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