IRG4BC30KD - International Rectifier
Description
PD -91595A
IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ.
= 2.
21V
@VGE = 15V, IC = 16A
n-ch an nel
Benefits
• Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGBC30KD2 and IRGBC30MD2 products • For hints see design tip 97003
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 28 16 58 58 12 58 10 ± 20 100 42 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m)
Units
V
A
µs V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
––– ––– ––– ––– –––
Typ.
––– ––– 0.
50 ––– 2 (0.
07)
Max.
1.
2 2.
5 ––– 80 –––
Units
°C/W
g (oz)
www.
irf.
com
1
4/24/2000
www.
DataSheet.
in
IRG4BC30KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(B...
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