NAND Flash Memory MLC - Micron
Description
Micron Confidential and Proprietary
8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features
NAND Flash Memory MLC
MT29F8G08MAAWC, MT29F8G08MAAWP, MT29F16G08QAAWC,MT29F32G08TAAWC
Features
• Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks – Device size: 8Gb: 4,096 blocks; 16Gb: 8,192 blocks; 32Gb: 16,384 blocks • READ performance – Random READ: 50µs – Sequential READ: 25ns • WRITE performance – PROGRAM PAGE: 650µs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 10,000 PROGRAM/ERASE cycles (with ECC and invalid block mapping) • First block (block address 00h) guaranteed to be valid with ECC when shipped from factory • Industry-standard basic NAND Flash command set • New commands – PAGE READ CACHE MODE – TWO-PLANE/MULTIPLE-DIE READ STATUS – Two-plane commands for concurrent-plane operations – READ UNIQUE ID (contact factory) – READ ID2 (contact factory) • Operation status byte provides a software method of detecting: – PROGRAM/ERASE/READ operation completion – PROGRAM/ERASE pass/fail condition – Write-protect status • Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM, READ, or ERASE cycle completion • WP# signal: Entire device hardware write protect • Staggered power-up sequence: Issue RESET (FFh) command
Figure 1:
48-Pin TSOP Type 1
Options • Density1 – 8Gb (single-die stack) – 16Gb (dual-die stack) – 32Gb (quad-die stack) • Device width: x8 • Configuration # of die # of # of I/O CE# R/B# 1 1 1 Common 2 2 2 Common 4 2 2 Common • VCC: 2.
7–3.
6V • First-generation die • Package – 48-pin TSOP type I (lead-free plating) – 48-pin TSOP type I OCPL2 (lead-free plating) • Operating temperature – Commercial (0°C to 70°C) – Extended (–40°C to +85°C)3 Notes: 1.
For part numbering and markings, see Figure 2 on page 2.
2.
OCPL = off-center parting line.
3.
For ET devices.
MLC PDF: 09005aef828313aa / Source: 09005aef82831392 8gb_nand_l41b_mlc__1.
fm - Rev.
B 11/07 EN
1
Micron Technol...
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