3-Input NAND Gate - ON Semiconductor
Description
NLX1G10 3-Input NAND Gate
The NLX1G10 is an advanced high−speed 3−input CMOS NAND gate in ultra−small footprint.
The NLX1G10 input structures provide protection when voltages up to 7.
0 V are applied, regardless of the supply voltage.
Features http://onsemi.
com MARKING DIAGRAMS
D ULLGA6 1.
0 x 1.
0 CASE 613AD M G
• • • • • • • •
High Speed: tPD = 2.
4 ns (Typ) @ VCC = 5.
0 V Designed for 1.
65 V to 5.
5 V VCC Operation Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C 24 mA Balanced Output Source and Sink Capability Balanced Propagation Delays Overvoltage Tolerant (OVT) Input Pins Ultra−Small Packages These are Pb−Free Devices
1
1 A 1 6 C
ULLGA6 1.
2 x 1.
0 CASE 613AE
M G
4
1 GND 2 5 VCC X M G
ULLGA6 1.
45 x 1.
0 CASE 613AF = Device Marking = Date Code = Pb−Free Package
G
M
Y
B
3
4
Y Pin
PIN ASSIGNMENT
Function A GND B Y VCC C 1 2 3 4
Figure 1.
Pinout (Top View)
A B C & Y
5 6
FUNCTION TABLE Figure 2.
Logic Symbol
A L X X H Input B X L X H C X X L H Output Y H H H L
H − HIGH Logic Level L − LOW Logic Level X = Either LOW or HIGH Logic Level
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev.
1
1
Publication Order Number: NLX1G10/D
www.
DataSheet.
in
NLX1G10
MAXIMUM RATINGS
Symbol VCC VIN VOUT IIK IOK IO ICC IGND TSTG TL TJ qJA PD MSL FR VESD DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source/Sink Current DC Supply Current per Supply Pin DC Ground Current per Ground Pin Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature Under Bias Thermal Resistance (Note 1) Power Dissipation in Still Air @ 85°C Moisture Sensitivity Flammability Rating Oxygen ESD Withstand Voltage Index: 28 to 34 Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) VIN < GND VOUT < GND Parameter Value −0...
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