DatasheetsPDF.com

IPUH6N03LB

Infineon Technologies
Part Number IPUH6N03LB
Manufacturer Infineon Technologies
Description OptiMOS2 Power-Transistor
Published Nov 1, 2010
Detailed Description Type IPUH6N03LB IPSH6N03LB OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target app...
Datasheet PDF File IPUH6N03LB PDF File

IPUH6N03LB
IPUH6N03LB

Overview
Type IPUH6N03LB IPSH6N03LB OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 6.
3 50 V mΩ A Type IPUH6N03LB IPSH6N03LB Package Marking PG-TO251-3 H6N03LB PG-TO251-3-11 H6N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID T C=25 °C2) T C=100 °C 50 50 200 160 6 ±20 A Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 83 -55 .
.
.
175 55/175/56 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)