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IPDH4N03LA

Infineon Technologies
Part Number IPDH4N03LA
Manufacturer Infineon Technologies
Description OPTIMOS 2 POWER - TRANSISTOR
Published Nov 1, 2010
Detailed Description IPDH4N03LA G IPSH4N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified ...
Datasheet PDF File IPDH4N03LA PDF File

IPDH4N03LA
IPDH4N03LA

Overview
IPDH4N03LA G IPSH4N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD Version) ID 25 4.
2 90 V mΩ A Type IPDH4N03LA G IPSH4N03LA G Package Ordering Code Marking P-TO252-3-11 Q67042-S4250 H4N03LA P-TO251-3-11 Q67042-S4254 H4N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=90 A, R GS=25 Ω I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 90 77 360 150 6 ±20 94 -55 .
.
.
175 55/175/56 mJ kV/µs V W °C Unit A Rev.
0.
92 - target data sheet page 1 2004-10-27 www.
DataSheet.
in IPDH4N03LA G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=40 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=50 A V GS=4.
5 V, I D=50 A, SMD version V GS=10 V, I D=60 A V GS=10 V, I D=60 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=60 A 25 1.
2 1.
6 0.
1 Values typ.
IPSH4N03LA G Unit max.
1.
6 75 50 K/W 2 1 V µA ...


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