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IPSH4N03LA

Infineon Technologies
Part Number IPSH4N03LA
Manufacturer Infineon Technologies
Description OPTIMOS 2 POWER - TRANSISTOR
Published Nov 1, 2010
Detailed Description IPDH4N03LA G IPSH4N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified ...
Datasheet PDF File IPSH4N03LA PDF File

IPSH4N03LA
IPSH4N03LA

Overview
IPDH4N03LA G IPSH4N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD Version) ID 25 4.
2 90 V mΩ A Type IPDH4N03LA G IPSH4N03LA G Package Ordering Code Marking P-TO252-3-11 Q67042-S4250 H4N03LA P-TO251-3-11 Q67042-S4254 H4N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=90 A, R GS=25 Ω I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=17...


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