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H9N03LA

Infineon Technologies
Part Number H9N03LA
Manufacturer Infineon Technologies
Description IPDH9N03LA
Published Nov 1, 2010
Detailed Description IPDH9N03LA G IPSH9N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified ...
Datasheet PDF File H9N03LA PDF File

H9N03LA
H9N03LA

Overview
IPDH9N03LA G IPSH9N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 9.
2 30 V mΩ A Type IPDH9N03LA G IPSH9N03LA G Package Marking PG-TO252-3-11 H9N03LA PG-TO251-3-11 H9N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 210 80 6 ±20 52 -55 .
.
.
175 55/175/56 mJ kV/µs V W °C Unit A Rev.
1.
0 page 1 2006-05-15 www.
DataSheet.
in IPDH9N03LA G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=15 A V GS=4.
5 V, I D=15 A, (PG-TO252-3-11) V GS=10 V, I D=30 A V GS=10 V, I D=30 A, (PG-TO252-3-11) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.
2 1.
6 0.
1 Values typ.
IPSH9N03LA G Unit max.
2.
9 75 50 K/W 2 1 V µA 21 10 10 13.
5 13.
3 7.
9 7.
7 1 42 100 100 16.
8 16.
6 ...


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