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2SK1304
Silicon N Channel MOS FET
REJ03G0923-0200 (Previous: ADE-208-1262) Rev. 2. 00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive • • • •
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
S 2 3
Rev. 2. 00 Sep 07, 2005 page 1 of 6
2SK1304
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Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 100 ±20 40 160 40 100 150 –55 to +150
Unit V V A A A W
*2
Tstg
°C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 ±20 — — 1. 0 — — 22 — — — — — — — — — Typ — — — — — 0. 025 0. 03 35 3500 1400 340 25 170 730 300 1. 2 300 Max — — ±10 250 2. 0 0. 03 0. 04 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 40 A, VGS = 0 IF = 40 A, VGS = 0, diF/dt = 50 A/µs Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V * 3 ID = 20 A, VGS = 4 V * ID = 20 A, ...
K1304 PDF File
