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SIDC81D120F6

Infineon Technologies
Part Number SIDC81D120F6
Manufacturer Infineon Technologies
Description Fast switching diode
Published Oct 5, 2010
Detailed Description www.DataSheet4U.com Preliminary SIDC81D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON tec...
Datasheet PDF File SIDC81D120F6 PDF File

SIDC81D120F6
SIDC81D120F6


Overview
www.
DataSheet4U.
com Preliminary SIDC81D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient A This chip is used for: • EUPEC power modules and discrete devices Applications: • SMPS, resonant applications, drives C Chip Type SIDC81D120F6 VR IF Die Size 9 x 9 mm2 Package sawn on foil Ordering Code Q67050-A4187A001 1200V 100A MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Anode metallisation Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9x9 81 / 69.
39 8.
28 x 8.
28 120 150 180 169 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 4205M, Edition 1, 8.
01.
2002 www.
DataSheet4U.
com Preliminary SIDC81D120F6 Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current (depending on wire bond configuration) Symbol VRRM IF I FSM I FRM Tj , Ts t g Condition Value 1200 100 Unit V tP = 10 ms sinusoidal tbd 200 -55.
.
.
+150 A Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Parameter Reverse leakage current Cathode-Anode breakdown Voltage Forward voltage drop Symbol IR V Br VF Conditions V R= 1 2 0 0 V I R= 4 m A I F =100A Tj= 2 5 ° C Tj= 2 5 ° C Tj= 2 5 ° C 1200 2.
1 Value min.
Typ.
max.
27 Unit µA V V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Parame...


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