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K12A60U

Toshiba Semiconductor
Part Number K12A60U
Manufacturer Toshiba Semiconductor
Description TK12A60U
Published Sep 11, 2010
Detailed Description www.DataSheet4U.com TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching R...
Datasheet PDF File K12A60U PDF File

K12A60U
K12A60U

Overview
www.
DataSheet4U.
com TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching Regulator Applications • • • • Low drain-source ON-resistance : RDS (ON) = 0.
36 Ω (typ.
) High forward transfer admittance : ⎪Yfs⎪ = 7.
0 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 12 24 35 69 12 3.
5 150 -55 to 150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V ...


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