Reverse Conducting IGBT - Infineon Technologies
Description
IHW20N120R2
Soft Switching Series
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Reverse Conducting IGBT with monolithic body diode
Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Applications: • Inductive Cooking • Soft Switching Applications Type IHW20N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.
5µs, sine halfwave TC = 100°C, tp ≤ 2.
5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s Ptot Tj Tstg IFpul s IFSM Symbol VCE IC Value 1200 40 20 60 60 40 20 30 50 130 120 ±20 ±25 330 -40.
.
.
+175 -55.
.
.
+175 260 W °C V Unit V A VCE 1200V IC 20A VCE(sat),Tj=25°C 1.
55V Tj,max 175°C Marking H20R1202 Package PG-TO-247-3-21
C
G
E
PG-TO-247-3-21
ICpul s IF
VGE
1
J-STD-020 and JESD-022 1 Rev.
1.
2 July 06
Power Semiconductors
IHW20N120R2
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise sp...
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