2SA1980 - AUK Corporation
Description
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Semiconductor
2SA1980
PNP Silicon Transistor
Description
• General small signal amplifier
Features
• Low collector saturation voltage : VCE(sat)=-0.
3V(Max.
) • Low output capacitance : Cob=4pF(Typ.
) • Complementary pair with 2SC5343
Ordering Information
Type NO.
2SA1980 Marking A1980 Package Code TO-92
Outline Dimensions
3.
45±0.
1 4.
5±0.
1 2.
25±0.
1
unit : mm
4.
5±0.
1
0.
4±0.
02
2.
06±0.
1
14.
0±0.
40
1.
27 Typ.
2.
54 Typ.
1 2 3
1.
20±0.
1
0.
38
PIN Connections 1.
Emitter 2.
Collector 3.
Base
KST-9002-002
1
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2SA1980
(Ta=25°C)
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-50 -50 -5 -150 625 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE fT Cob NF
*
Test Condition
IC=-100µA, IE=0 IC=-10mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.
1mA f=1KHz, Rg=10K1
Min.
Typ.
Max.
-50 -50 -5 70 80 4 -0.
1 -0.
1 700 -0.
3 7 10
Unit
V V V µA µA V MHz pF dB
VCE(sat)
*: hFE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700.
KST-9002-002
2
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2SA1980
Electrical Characteristic Curves
Fig.
1 PC-Ta Fig.
2 IC-VBE
Fig.
3 IC-VCE
Fig.
4 hFE-IC
Fig.
5 VCE(sat)-IC
KST-9002-002
3
...
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