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MS1227

Part Number	MS1227
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Published	Sep 3, 2010
Detailed Description	www.DataSheet4U.com MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 12.5 VOLTS GOLD M...
Datasheet	MS1227 PDF File

Overview

www.
DataSheet4U.
com MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 12.
5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.
5V epitaxial NPN planar transistor designed primarily for SSB communications.
This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 4.
0 4.
5 80 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Junction-...

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