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MS1226

Part Number	MS1226
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Published	Sep 3, 2010
Detailed Description	www.DataSheet4U.com MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = ...
Datasheet	MS1226 PDF File

Overview

www.
DataSheet4U.
com MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications.
This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Co llector-base Voltage Co llector-emitter Voltage Emit ter-Base Voltage Dev ice Current Po wer Dissipation Ju nction Temperature Storage Temperature Paramete r 65 36 4.
0 4.
5 80 +200 -65 to +150 Value U V V V A W C C nit Thermal Thermal Data RTH(J-C) ...

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