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BC818W

Part Number	BC818W
Manufacturer	Guangdong Kexin Industrial
Description	NPN Silicon AF Transistors
Published	Sep 3, 2010
Detailed Description	www.DataSheet4U.com SMD Type NPN Silicon AF Transistors KC818W(BC818W) Features For general AF applications. High colle...
Datasheet	BC818W PDF File

Overview

www.
DataSheet4U.
com SMD Type NPN Silicon AF Transistors KC818W(BC818W) Features For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating 30 25 5 500 1 100 250 150 -65 to +150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC818-16W DC current gain * Collector saturation voltage * Base to emitter voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% KC818-25W KC818-40W VCE(sat) IC = 500 mA, IB = 50 mA VBE(sat) IC = 500 mA, IB = 50 mA CCb Ceb fT VCB = 10 V, f = 1 MHz VEB = 0.
5 V, f = 1 MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 6 60 170 hFE IC = 100 mA, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO IC = 10 Testconditons A, IE = 0 Min 30 25 5 100 50 100 100 160 250 160 250 350 250 400 630 0.
7 1.
2 V V pF pF MHz Typ Max Unit V V V nA A nA IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 VEB = 4 V, IC = 0 Marking NO.
Marking KC818-16W 6E KC818-25W 6F KC818-40W 6G www.
kexin.
com.
cn 1 ...

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