DatasheetsPDF.com

MTD6N10E

Part Number	MTD6N10E
Manufacturer	Motorola
Description	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
Published	Aug 17, 2010
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA com Order this document by MTD6N10E/D Designer's TMOS E-FET ....
Datasheet	MTD6N10E PDF File

Overview

...™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discre...

Similar Datasheet

MTD6N10 TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS - Motorola
MTD6N10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM - Motorola
MTD6N15 Power Field Effect Transistor - ON Semiconductor
MTD6N15 Power MOSFET - Motorola

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)