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K3520PQ-XH

Part Number	K3520PQ-XH
Manufacturer	KEC
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Published	Jul 30, 2010
Detailed Description	SEMICONDUCTOR TECHNICAL DATA General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-dire...
Datasheet	K3520PQ-XH PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
K3520PQ-XH www.
DataSheet4U.
com Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 2000 S2 FEATURES ¡⁄ Low on-state resistance RDS(ON)1 = 16m¥ MAX (VGS=4.
5V, IS=1.
0A) RDS(ON)2 = 17m¥ MAX (VGS=3.
9V, IS=1.
0A) RDS(ON)3 = 20m¥ MAX (VGS=3.
5V, IS=1.
0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Unless otherwise noted) RATING 24 ¡ -55¡› 12 150 ¡ UNIT V V SYMBOL VDSS VGSS Tstg ...

Similar Datasheet

K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor - KEC

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