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B1340

ROHM Electronics
Part Number B1340
Manufacturer ROHM Electronics
Description 2SB1340
Published Jul 25, 2010
Detailed Description INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon PNP Darlington Power Transistor 2SB...
Datasheet PDF File B1340 PDF File

B1340
B1340


Overview
INCHANGE Semiconductor isc Product Specification www.
DataSheet4U.
com isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ -10 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website:www.
iscsemi.
cn INCHANGE Semiconductor isc Product Specification www.
DataSheet4U.
com isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) ICBO IE...



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