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TPCA8104

Toshiba Semiconductor
Part Number TPCA8104
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applicatio...
Datasheet PDF File TPCA8104 PDF File

TPCA8104
TPCA8104

Overview
TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.
) • High forward transfer admittance:|Yfs| = 50 S (typ.
) • Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) • Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -1 mA) 0.
5±0.
1 1.
27 8 0.
4±0.
1 5 Unit: mm 0.
05 M A 6 .
0 ± 0 .
3 5 .
0 ± 0 .
2 0.
15±0.
05 0.
95±0.
05 1 4 5 .
0 ± 0 .
2 0.
595 A 0.
166±0.
05 S 0.
05 S 1 4 1.
1±0.
2 0 .
6 ± 0 .
1 3 .
5 ± 0 .
2 Absolute Maximum Ratings (Ta = 25°C) 4.
25±0.
2 Characteristic Symbol Rating Unit 8 5 0.
8±0.
1 Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current Pulse (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy...


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