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TPCA8026

Toshiba Semiconductor
Part Number TPCA8026
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPCA8026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCA8026 Lithium-Ion Battery Applications ...
Datasheet PDF File TPCA8026 PDF File

TPCA8026
TPCA8026

Overview
TPCA8026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCA8026 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.
27 0.
4 ± 0.
1 8 0.
05 M A 5 6.
0 ± 0.
3 5.
0 ± 0.
2 • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 1.
8 mΩ (typ.
) • High forward transfer admittance: |Yfs| =100 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) 0.
15 ± 0.
05 1 4 0.
595 A 5.
0 ± 0.
2 0.
166 ± 0.
05 0.
95 ± 0.
05 1.
1 ± 0.
2 Absolute Maximum Ratings (Ta = 25°C) 0.
05 S S 1 4 0.
6 ± 0.
1 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25℃) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit 30 V 30 V ±20 V 45 A 135 45 W 2.
8 W 1.
6 W 263 mJ 45 A 3.
4 mJ 150 °C −55 to 150 °C 4.
25 ± 0.
2 0.
8 ± 0.
1 8 5 1,2,3: SORCE 4: GATE 5,6,7,8:DRAIN JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.
069 g (typ.
) Circuit Configuration 8765 3.
5 ± 0.
2 Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the 1234 reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and...


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