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TPCA8024

Part Number	TPCA8024
Manufacturer	Toshiba Semiconductor
Description	Lithium-Ion Battery Applications
Published	Jul 16, 2010
Detailed Description	www.DataSheet4U.com TPCA8024 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCA8024 Lithium-Ion...
Datasheet	TPCA8024 PDF File

Overview

www.
DataSheet4U.
com TPCA8024 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCA8024 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 3.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 72 S (typ.
) 0.
95 ± 0.
05 6.
0 ± 0.
3 5.
0 ± 0.
2 Unit: mm 1.
27 0.
4 ± 0.
1 8 5 0.
05 M A 0.
15 ± 0.
05 Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) 5.
0 ± 0.
2 Absolute Maximum Ratings (Ta = 25°C) S Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 35 105 35 2.
8 Unit 0.
6 ± 0.
1 1 4 V V V A W W 4.
25 ± 0.
2 Drain power dissipation Drain power dissipation 1,2,3: SOURCE 5,6,7,8: DRAIN 4: GATE JEDEC JEITA TOSHIBA ― ― 2-5Q1A 1.
6 W 159 35 3.
5 150 -55 to 150 mJ A mJ °C °C Weight: 0.
069 g (typ.
) Circuit Configuration 8 7 6 5 Note: For Note 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2 3 0.
8 ± 0.
1 8 5 3.
5 ± 0.
2 1.
1 ± 0.
2 0.
05 S 0.
166 ± 0.
05 Low...

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