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TPCA8021-H

Toshiba Semiconductor
Part Number TPCA8021-H
Manufacturer Toshiba Semiconductor
Description High Efficiency DC/DC Converter Applications
Published Jul 16, 2010
Detailed Description TPCA8021-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) T...
Datasheet PDF File TPCA8021-H PDF File

TPCA8021-H
TPCA8021-H

Overview
TPCA8021-H www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8021-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications 6.
0±0.
3 0.
5±0.
1 8 1.
27 0.
4±0.
1 5 Unit: mm 0.
05 M A • • • • • • • Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 6.
9nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 6.
8 mΩ (typ.
) High forward transfer admittance: |Yfs| =46 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) 5.
0±0.
2 0.
15±0.
05 1 5.
0±0.
2 0.
95±0.
05 4 0.
595 A 0.
166±0.
05 S 1 0.
05 S 4 1.
1±0.
2 0.
6±0.
1 4.
25±0.
2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 30 30 ±20 27 81 45 2.
8 Unit V V V A W W 8 5 0.
8±0.
1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Weight: 0.
068 g (typ.
) 1.
6 W Circuit Configuration 8 7 6 5 95 27 2.
7 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.
5±0.
2 Maximum Ratings (Ta = 25°C) 4 Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device.
Handle with care.
1 2006-01-17 TPCA8021-H www.
DataSheet4U.
com Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.
78 Unit °C/W Rth (ch-a) 44.
6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.
1 °C/W Marking (Note 5) TPCA 8021-H * Type Lot No.
Note ...


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