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TPCA8011-H

Toshiba Semiconductor
Part Number TPCA8011-H
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Effic...
Datasheet PDF File TPCA8011-H PDF File

TPCA8011-H
TPCA8011-H

Overview
TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications Unit: mm 0.
5±0.
1 1.
27 0.
4±0.
1 8 5 0.
05 M A 6.
0±0.
3 5.
0±0.
2 • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW =16 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 2.
7 mΩ (typ.
) • High forward transfer admittance: |Yfs| =120 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.
6 to 1.
3 V (VDS = 10 V, ID = 200 μA) 0.
15±0.
05 0.
95±0.
05 1 4 5.
0±0.
2 0.
595 A 0.
166±0.
05 S 0.
05 S 1 4 1.
1±0.
2 0.
6±0.
1 3.
5±0.
2 4.
25±0.
2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain powe...


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