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TPC8022-H

Toshiba Semiconductor
Part Number TPC8022-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8022-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III) T...
Datasheet PDF File TPC8022-H PDF File

TPC8022-H
TPC8022-H

Overview
TPC8022-H www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications z Small footprint due to a small and thin package z High speed switching z Small gate charge : QSW = 3.
5 nC (typ.
) z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.
) z High forward transfer admittance: |Yfs| = 15 S (typ.
) z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 7.
5 30 1.
9 1.
0 26 7.
5 0.
08 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C 1 2 3 4 JEDEC JEITA TOSHIBA ― ― 2-6J1B Weight: 0.
085 g (typ.
) Drain power dissipation (t = 10 s) Drain power dissipation (t = 10 s) Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 4) Channel temperature Storage temperature range Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle ...


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