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TPC8021-H

Toshiba Semiconductor
Part Number TPC8021-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8021-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TP...
Datasheet PDF File TPC8021-H PDF File

TPC8021-H
TPC8021-H

Overview
TPC8021-H www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.
6 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 13.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| =19 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 11 44 1.
9 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1B Weight: 0.
085 g (typ.
) Pulsed (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation W Circuit Configuration 8 7 6 5 Drain power dissipation 1.
0 W Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 79 11 0.
14 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note: Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care.
1 2006-11-16 TPC8021-H www.
D...


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