DatasheetsPDF.com

TPC8119

Toshiba Semiconductor
Part Number TPC8119
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Jul 16, 2010
Detailed Description www.DataSheet4U.com TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion ...
Datasheet PDF File TPC8119 PDF File

TPC8119
TPC8119

Overview
www.
DataSheet4U.
com TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications • • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.
) High forward transfer admittance: |Yfs| = 24 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −10 −40 1.
9 1.
0 67 −10 0.
030 150 −55 to 150 Unit V V V A JEDEC JEITA TOSHIBA ⎯ ⎯ 2-6J1B Weight: 0.
080 g (typ.
) Drain power dissipation Drain power dissipation W W mJ A mJ °C °C Circuit Configuration 8 7 6 5 Single pulse...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)