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TPC8118

Toshiba Semiconductor
Part Number TPC8118
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Jul 16, 2010
Detailed Description www.DataSheet4U.com TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8118 Notebook PC A...
Datasheet PDF File TPC8118 PDF File

TPC8118
TPC8118

Overview
www.
DataSheet4U.
com TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8118 Notebook PC Applications Unit: mm • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 36 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −13 −52 1.
9 1.
0 110 −13 0.
030 150 −55 to 150 Unit V V V A W Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range JEDEC W mJ A mJ °C °C ― ― 2-6J1B JEITA TOSHIBA Weight: 0.
080 g (typ.
) Circuit Configuration 8 7 6 5 Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care.
1 2 3 4 1 2009-09-29 www.
DataSheet4U.
com TPC8118 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t =...


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