DatasheetsPDF.com

TPC8117

Toshiba Semiconductor
Part Number TPC8117
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8117 Lithium Ion Battery Applications No...
Datasheet PDF File TPC8117 PDF File

TPC8117
TPC8117

Overview
TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8117 Lithium Ion Battery Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 3.
0 mΩ (typ.
) • High forward transfer admittance : |Yfs| = 54 S (typ.
) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg −30 V −30 V ±20 V −18 A −72 1.
9 W 1.
0 W 211 mJ −18...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)