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TPC8116-H

Toshiba Semiconductor
Part Number TPC8116-H
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8116-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TP...
Datasheet PDF File TPC8116-H PDF File

TPC8116-H
TPC8116-H

Overview
TPC8116-H www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications • • • • • • • Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 9.
7 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 24mΩ (typ.
) High forward transfer admittance: |Yfs| =14 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −40 V) Enhancement mode: Vth =−0.
8 to−2.
0 V (VDS =−10 V, ID =−1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Rating −40 −40 ±20 −7.
5 −30 1.
9 Unit V V V A JEDEC JEITA TOSHIBA ⎯ ⎯ 2-6J1B Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche ener...


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