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TPC8115

Toshiba Semiconductor
Part Number TPC8115
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8115 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8115 Lithium Ion B...
Datasheet PDF File TPC8115 PDF File

TPC8115
TPC8115

Overview
TPC8115 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8115 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 6.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 40 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −20 −20 ±8 −10 −40 1.
9 1.
0 26 −10 0.
19 150 −55 to 150 Unit V V V A W JEDEC JEITA TOSHIBA ― ― 2-6J1B Weight: 0.
080 g (typ.
) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current ...


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