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TPC8113

Toshiba Semiconductor
Part Number TPC8113
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8113 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8113 Lithium Ion B...
Datasheet PDF File TPC8113 PDF File

TPC8113
TPC8113

Overview
TPC8113 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8113 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.
) High forward transfer admittance: |Yfs| = 23 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −11 −44 1.
9 1.
0 31.
5 −11 0.
19 150 −55 to 150 Unit V V V A W JEDEC JEITA TOSHIBA ― ― 2-6J1B Weight: 0.
080 g (typ.
) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration W mJ A mJ °C °C 1 2 3 4 8 7 6 5 Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-15 TPC8113 www.
DataSheet4U.
com Thermal Characteristics Characteristics Thermal resistance, chan...


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