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TPC8A02-H

Toshiba Semiconductor
Part Number TPC8A02-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8A02-H www.DataSheet4U.com ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS...
Datasheet PDF File TPC8A02-H PDF File

TPC8A02-H
TPC8A02-H

Overview
TPC8A02-H www.
DataSheet4U.
com ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPC8A02-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • • Built-in schottky barrier diode Low forward voltage: VDSF = 0.
6V(Max.
) High-speed switching.
Small gate charge.
: QSW ＝ 11 nC(Typ.
) Low drain-source ON-resistance: RDS (ON) = 4.
3 mΩ (typ.
) High forward transfer admittance: |Yfs| = 40 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 16 48 1.
9 1.
0 166 16 0.
11 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C 1,2,3 4 5,6,7,8 JEDEC JEITA TOSHIBA SOURCE，ANODE GATE DRAIN，CATHODE ― ― 2-6J1B Weight: 0.
085 g (typ.
) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This trans...


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