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TPC6107

Toshiba Semiconductor
Part Number TPC6107
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC6107 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Ap...
Datasheet PDF File TPC6107 PDF File

TPC6107
TPC6107

Overview
TPC6107 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.
) High forward transfer admittance: |Yfs| = 9.
6 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement model: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 µA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±12 −4.
5 −18 2.
2 0.
7 1.
3 −2.
25 0.
22 150 −55 to 150 Unit V V V A Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) JEDEC W W mJ A mJ °C °C ⎯ ⎯ 2-3T1A JEITA TOSHIBA Weight: 0.
011 g (typ.
) Single pulse avalanche energy (Note 3) Avalanche current Re...


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