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2SK4019

Toshiba Semiconductor
Part Number 2SK4019
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description www.DataSheet4U.com 2SK4019 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOS V) 2 2SK4019 Choppe...
Datasheet PDF File 2SK4019 PDF File

2SK4019
2SK4019

Overview
www.
DataSheet4U.
com 2SK4019 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOS V) 2 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Applications ６．５±０．２ ５．２±０．２ １．５±０．２ Unit: mm ０．６ MAX． z 4 V gate drive z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.
17 Ω (typ.
) : |Yfs| = 4.
5 S (typ.
) １．６ ０．９ ４．１±０．２ ５．７ ５．５±０．２ １．１±０．２ : IDSS = 100 μA (max) (VDS = 100 V) : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) ２．３ ２．３ ０．６ MAX Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±20 5 20 20 180 5 2 150 −55~150 Unit V V V A A W mJ A mJ °C °C ０．８ MAX． １．1 MAX． １ ２ ３ ０．６±０．１５ ０．６±０．１５ ２．３±０．２ JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.
25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial)...


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