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2SK4016

Toshiba Semiconductor
Part Number 2SK4016
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description www.DataSheet4U.com 2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4016 Switching R...
Datasheet PDF File 2SK4016 PDF File

2SK4016
2SK4016

Overview
www.
DataSheet4U.
com 2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4016 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.
33 Ω (typ.
) High forward transfer admittance: |Yfs| = 10 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 13 52 50 1033 13 5.
0 150 −55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.
7 g (typ.
) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
5 62.
5 Unit 2 °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.
7 mH, IAR = 13 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.
Handle with care.
3 1 1 2005-05-30 www.
DataSheet4U.
com 2SK4016 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 13 A Duty < = 1%, tw = 10 μs Symbol IGSS V (BR) GSS IDSS V (BR)...


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