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2SK4015

Toshiba Semiconductor
Part Number 2SK4015
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description www.DataSheet4U.com 2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4015 Switching R...
Datasheet PDF File 2SK4015 PDF File

2SK4015
2SK4015

Overview
www.
DataSheet4U.
com 2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4015 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.
60 Ω (typ.
) High forward transfer admittance: |Yfs| = 7.
4 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 40 45 363 10 4.
5 150 -55 to 150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight: 1.
7 g (typ.
) Note: Using continuously under heavy...


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