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2SK4026

Toshiba Semiconductor
Part Number 2SK4026
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description www.DataSheet4U.com 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK4026 Switching Re...
Datasheet PDF File 2SK4026 PDF File

2SK4026
2SK4026

Overview
www.
DataSheet4U.
com 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK4026 Switching Regulator Applications ６．５±０．２ ５．２±０．２ １．５±０．２ Unit: mm ０．６ MAX． Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.
4 Ω(typ.
) High forward transfer admittance: |Yfs| = 0.
85 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) ０．９ １．６ ５．５±０．２ １．１±０．２ ４．１±０．２ ５．７ ０．６ MAX ２．３ ２．３ ２．３±０．２ ０．６±０．１５ ０．６±０．１５ Absolute Maximum Ratings (Ta = 25°C) １ ２ ３ Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 1 2 20 56 1 2 150 −55 to 150 Unit V V V A W mJ A mJ °C °C ０．８ MAX． １．1 MAX． JEDEC JEITA TOSHIBA ― ― 2-7J2B Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (N...


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